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| FGW15N40A Strobe Flash N-Channel Logic Level IGBT August 2005 FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features VCE(SAT) = 4.4V at IC=150A tfl = 1.1s, td(OFF)I = 0.46s 2kV ESD Protected High Peak Current Density TSSOP - 8 package, small footprint, low profile (1mm thick) General Description This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where bigger, more expensive packages are impractical. The gate is ESD protected with a zener diode. Applications Camera Strobe Internal Diagram 4 E E E G C C C C Pin 1 5 6 7 8 3 2 1 TSSOP-8 (c)2005 Fairchild Semiconductor Corporation FGW15N40A Rev. A2 1 www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT Device Maximum Ratings TA = 25C unless otherwise noted Symbol BVCES IC ICP VGES VGEP PD TJ TSTG ESD Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous(DC) Collector Current Pulsed(100s) Gate to Emitter Voltage Continuous(DC) Gate to Emitter Voltage Pulsed Power Dissipation Total TC = 25C Operating Junction Temperature Range Storage Junction Temperature Range Electrostatic Discharge Voltage at 100pF, 1500 Ratings 400 8 150 6 8 1.25 -40 to 150 -40 to 150 2 Units V A A V V W C C kV Package Marking and Ordering Information Device Marking 15N40A Device FGW15N40A Package TSSOP - 8 Tape Width 12mm / 16mm Quantity 2500 Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES BVGES ICES Collector to Emitter Breakdown Voltage Gate-Emitter Breakdown Voltage Collector to Emitter Leakage Current IC = 1mA, VGE = 0V IGES = 1mA VCE = 400V TC = +25oC TC = +125 C IGES Gate-Emitter Leakage Current VGE = 8V o 400 8 - - 10 250 10 V V A A A On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 150A, VGE = 4.0V (NOTE 1) 4.4 6.0 V Dynamic Characteristics QG(ON) VGEPL VGE(TH) CIES Gate Charge Gate to Emitter Plateau Voltage Gate to Emitter Threshold Voltage Input Capacitance IC = 150A, VCE = 300V, VGE = 8V IC = 150A, VCE = 300V IC = 1.0mA,VCE = VGE VCE = 10V, VGE = 0V, f = 1MHz 0.4 41 3.3 0.61 1800 0.75 nC V V pF Switching Characteristics tON td(ON)I trI tOFF td(OFF)I tfI Turn-On Time Current Turn-On Delay Time Current Rise Time Turn-Off Time Current Turn-Off Delay Time Current Fall Time VCE = 300V, IC = 150A, VGE = 4V, RL = 2, RG = 51 TJ = 25C , 0.91 0.18 0.73 1.56 0.46 1.1 s s s s s s Thermal Characteristics RJA Thermal Resistance Junction-Case TSSOP - 8 (NOTE 2) 80 C/W Notes: 1. Pulse Duration = 100sec 2. Mounted on a 1 inch2 1oz copper pad 2 FGW15N40A Rev. A2 www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT Typical Characteristics 140 120 100 80 60 40 20 0 1 1.5 2 2.5 3 3.5 4 4.5 Waveforms in descending order VGE = 6.0V VGE = 5.0V VGE = 4.0V VGE = 3.5V TJ = -40C PULSE DURATION = 100s ICE, ICOLLECTOR TO EMITTER CURRENT (A) ICE, ICOLLECTOR TO EMITTER CURRENT (A) 160 160 140 120 100 80 60 40 20 0 1 1.5 2 2.5 3 3.5 4 4.5 5 Waveforms in descending order VGE = 6.0V VGE = 5.0V VGE = 4.0V VGE = 3.5V TJ = 25C PULSE DURATION = 100s VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Collector to Emitter On-State Voltage vs Collector Current ICE, ICOLLECTOR TO EMITTER CURRENT (A) 160 140 120 100 80 60 40 20 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Waveforms in descending order VGE = 6.0V VGE = 5.0V VGE = 4.0V VGE = 3.5V TJ = 70C PULSE DURATION = 100s Figure 2. Collector to Emitter On-State Voltage vs Collector Current ICE, ICOLLECTOR TO EMITTER CURRENT (A) 160 140 120 100 80 60 40 20 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Waveforms in descending order VGE = 6.0V VGE = 5.0V VGE = 4.0V VGE = 3.5V TJ = 125C PULSE DURATION = 100s VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector to Emitter On-State Voltage vs Collector Current VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 7 6 5 ICE = 120A 4 ICE = 90A 3 2 1 -40 -20 0 20 40 60 80 100 120 140 ICE = 60A VGE = 4V PULSE DURATION = 100s ICE = 150A Figure 4. Collector to Emitter On-State Voltage vs Collector Current VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7 VGE = 4.5V PULSE DURATION = 100s 6 ICE = 150A 5 ICE = 120A 4 ICE = 90A 3 ICE = 60A 2 -40 -20 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) TC, CASE TEMPERATURE (C) Figure 5. Collector to Emitter Saturation Voltage vs Case Temperature 3 FGW15N40A Rev. A2 Figure 6. Collector to Emitter Saturation Voltage vs Case Temperature www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT Typical Characteristics (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7 DUTY CYCLE < 0.5% PULSE DURATION = 250s TJ = -40oC ICE = 150A ICE = 120A 5 ICE = 90A ICE = 60A 4 7 DUTY CYCLE < 0.5% PULSE DURATION = 250s TJ = 25oC ICE = 150A ICE = 120A 5 ICE = 90A ICE = 60A 4 6 6 3 3 2 0.5 1 1.5 2 2.5 3 3.5 4 2 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGE, GATE TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage VCE, COLLECTOR TO EMITTER VOLTAGE (V) 9 8 7 6 5 4 3 2 0 1 2 3 4 5 6 DUTY CYCLE < 0.5% PULSE DURATION = 250s TJ = 70oC ICE = 150A ICE = 120A ICE = 90A ICE = 60A Figure 8. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage VCE, COLLECTOR TO EMITTER VOLTAGE (V) 9 8 7 6 5 4 3 2 0 1 2 3 4 5 6 7 DUTY CYCLE < 0.5% PULSE DURATION = 250s TJ = 125oC ICE = 150A ICE = 120A ICE = 90A ICE = 60A VGE, GATE TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) Figure 9. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage 0.75 VGE(TH), THRESHOLD VOLTAGE (V) 0.7 ICE = 1mA VCE = VGE Figure 10. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage 5000 FREQUENCY = 1MHz CIES 1000 C, CAPACITANCE (pF) 0.65 0.6 0.55 0.5 0.45 0.4 -40 COES 100 CRES 10 4 -20 0 20 40 60 80 100 120 140 0.1 1 10 100 TC, CASE TEMPERATURE (C) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 11. Gate to Emitter Threshold Voltage vs Case Temperature Figure 12. Capacitance vs Collector to Emitter Voltage 4 FGW15N40A Rev. A2 www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT Typical Characteristics (Continued) 6 VCC = 300V, VGE = 4V, RGE = 51, TJ = 25oC 3 VCC = 300V, ICE = 150A, VGE = 4V, TJ = 25oC toff SWITCHING TIME (s) tfall 1 SWITCHING TIME (s) toff tfall 1 ton trise ton trise 0.1 0 25 50 75 100 125 150 0.5 0 50 100 150 200 250 300 ICE, COLLECTOR TO EMITTER CURRENT (A) RG, GATE RESISTANCE () Figure 13. Switching Time vs Collector Current 8 VGE, GATE TO EMITTER VOLTAGE (V) 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 IG(REF) = 1mA, VCC = 300V, RL = 2, TJ = 25oC Figure 14. Switching Time vs Gate Resistance 160 ICP, COLLECTOR PEAK CURRENT (A) 140 120 100 80 60 40 20 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 TJ = 25C PULSE DURATION = 100s QG, GATE CHARGE (nC) VGE, GATE TO EMITTER VOLTAGE (V) Figure 15. Gate Charge Figure 16. Collector Current Limit vs Gate to Emitter Voltage 2.0 ZJA , NORMALIZED THERMAL RESPONSE 1.0 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 t1 0.01 PD t2 SINGLE PULSE 0.001 10-4 10-3 10-2 10-1 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJA X RJA) + TC 100 101 0.1 t1 , RECTANGULAR PULSE DURATION (s) Figure 17. Normalized Transient Thermal Impedance, Junction to Case 5 FGW15N40A Rev. A2 www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 6 FGW15N40A Rev. A2 www.fairchildsemi.com |
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